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| S DU/D3055L2 S amHop Microelectronics C orp. May,2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Trans is tor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m W ) Max ID 15A R DS (ON) S uper high dense cell design for low R DS (ON). 60 @ V G S = 4.5V 70 @ V G S = 2.5V R ugged and reliable. TO-252 and TO-251 P ackage. D D G S G D S G S DU S E R IE S TO-252AA(D-P AK) S DD S E R IE S TO-251(l-P AK) S AB S OL UTE MAXIMUM R ATINGS P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ TJ=125 C b -P ulsed (300ms Pulse Width) Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange (TA=25 C unles s otherwis e noted) S ymbol VDS VGS ID IDM IS PD TJ, TS TG Limit 20 12 15 25 15 50 -55 to 150 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient 1 R JC R JA 3 50 C /W C /W S DU/D3055L2 E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS c S ymbol Condition VGS = 0V, ID = 250uA VDS = 20V, VGS = 0V VGS = 8V, VDS = 0V VDS = VGS, ID = 250uA VGS =4.5V, ID = 6.0A VGS =2.5V, ID = 5.2A VDS = 5V, VGS = 4.5V VDS = 10V, ID = 6.0A Min Typ C Max Unit 20 1 100 0.7 34 45 20 17 705 280 65 60 70 V uA nA V m-ohm m-ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance VDS =8V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDD = 10V, ID = 1A, VGEN = 4.5V, R L = 10 ohm RGEN = 6 ohm VDS=10V,ID =6A,VGS=10V VDS=10V,ID =6A,VGS=4.5V VDS =10V, ID = 6A, VGS =10V 2 10 15 35 20 25 9.3 2 2 ns ns ns ns nC nC nC nC S DU/D3055L 2 E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unles s otherwis e Parameter 5 Diode Forward Voltage S ymbol VSD Condition VGS = 0V, Is =1.7A Min Typ Max Unit 0.72 1.2 V C DR AIN-SOUR CE DIODE CHAR ACTER ISTICS b Notes a.S urface Mounted on FR 4 Board, t <= 10sec. b.Pulse Test:Pulse Width <=300us, Duty Cycle<= 2%. c.Guaranteed by design, not subject to production testing. 25 V G S =10,9,8,7,6,5,4,3V 20 20 25 ID, Drain C urrent(A) ID, Drain C urrent (A) 15 V G S = 2V 15 10 5 0 10 T j=125 C 5 -55 C 0 0.0 25 C 0 1 2 3 4 5 6 0.5 1 1.5 2 2.5 3 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C har acter istics R DS (ON), On-R es is tance(Ohms ) (Normalized) 3000 2500 1.8 1.6 1.4 1.2 1.0 0.8 F igure 2. Tr ansfer C har acter istics V G S =4.5V ID=6A C , C apacitance (pF ) 2000 1500 1000 500 0 C is s C os s C rs s 0 2 4 6 8 10 12 0.6 -50 0 50 100 150 V DS , Drain-to S ource Voltage (V ) T j, J unction T emperature ( C ) F igure 3. C apacitance F igure 4. On-R esistance Var iation with Temper ature 3 S DU/D3055L 2 1.06 1.03 1.00 0.97 0.94 0.91 -50 -25 0 25 50 75 100 125 150 V DS=V GS ID=250uA B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.09 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=250uA 5 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igur e 5. G ate T hr eshold V ar iation with T emper atur e 36 F igur e 6. B r eak down V oltage V ar iation with T emper atur e 20 gFS , T rans conductance (S ) 24 18 12 6 0 0 3 6 9 12 15 V DS=10V Is , S ource-drain current (A) 30 10 1 0 0.4 0.6 0.8 1.0 T J =25 C 1.2 1.4 IDS , Drain-S ource C urrent (A) V S D, B ody Diode F orward V oltage (V ) F igur e 7. T r ansconductance V ar iation with Dr ain C ur r ent 10 ID, Drain C urrent (A) F igur e 8. B ody Diode F or war d V oltage V ar iation with Sour ce C ur r ent 50 V G S , G ate to S ource V oltage (V ) 8 6 4 2 0 0 V DS=10V ID=6A 10 RD S ( ) ON L im it 10 10 0m s ms 11 DC 1s 0.1 0.03 VGS =4.5V S ingle P ulse T c=25 C 0.1 1 10 20 50 4 8 12 16 20 24 28 32 Qg, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) F igur e 9. G ate C har ge 4 F igur e 10. M aximum Safe O per ating A r ea S DU/D3055L 2 V DD ton V IN D VG S R GE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 6 S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 S ING LE P ULS E 0.01 10 -5 -4 -3 -2 -1 P DM t1 1. 2. 3. 4. 10 10 10 t2 R cJ A (t)=r (t) * R cJ A R cJ A=S ee Datas heet T J M-T A = P DM* R cJ A (t) Duty C ycle, D=t1/t2 1 10 10 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 S DU/D3055L2 6 S DU/D3055L2 5 95 7 84 9 6.00 35 05 85 0.94 4 3 0 9 7 30 3 9 36 3 41 3 3 5 1 4 L2 2.29 9.70 1.425 0.650 0.600 BSC 1 1.625 0.850 REF. 0.090 82 56 6 0.024 BSC 398 0.064 33 REF. 7 S DU/D3055L2 TO-251 Tube TO251 Tube/TO-252 Tape and Reel Data " A" TO-252 Carrier Tape UNIT:P PACKAGE TO-252 (16 P) A0 6.80 O0.1 B0 10.3 O0.1 K0 2.50 O0.1 D0 r2 D1 r1.5 + 0.1 -0 E 16.0 0.3O E1 1.75 0.1O E2 7.5 O0.15 P0 8.0 O0.1 P1 4.0 O0.1 P2 2.0 O0.15 T 0.3 O0.05 TO-252 Reel S UNIT:P TAPE SIZE 16 P REEL SIZE r 330 M r330 O 0.5 N r97 O 1.0 W 17.0 + 1.5 -0 T 2.2 H r13.0 + 0.5 - 0.2 K 10.6 S 2.0 O0.5 G R V 8 |
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